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 Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
2SA882
DESCRIPTION *With TO-3 package *Excellent Safe Operating Area APPLICATIONS *For power and switching applications
PINNING PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION
Absolute maximum ratings(Ta=)
SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE -130 -130 -5 -7 100 150 -65~200 UNIT V V V A W
THERMAL CHARACTERISTICS
SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 1.52 UNIT /W
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
2SA882
MAX
UNIT
V(BR)CEO
Collector-emitter breakdown voltage
IC=-30mA ;IB=0
-130
V
VCEsat-1
Collector-emitter saturation voltage
IC=-3A; IB=-0.3A
-1.0
V
VCEsat-2
Collector-emitter saturation voltage
IC=-7A ;IB=-1.5A
B
-3.0
V
VBE
Base-emitter on voltage
IC=-3A ; VCE=-4V
-1.6
V
ICBO
Collector cut-off current
VCE=-130V; IB=0
-0.1
mA
IEBO
Emitter cut-off current
VEB=-5V; IC=0
-0.1
mA
hFE-1
DC current gain
IC=-1A ; VCE=-4V
40
hFE-2
DC current gain
IC=-3A ; VCE=-4V
20
2
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
2SA882
Fig.2 outline dimensions (unindicated tolerance:0.1mm)
3


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